Research: the Objective of the Nitride Electronic Next-Generation Technology (next) Program IS to Develop a Revolutionary Nitride Transistor Technology That Simultaneously Provides Extremely High-Speed and High-Voltage Swing (jfom > 5 Thz-V) in a Process Consistent With Large Scale Integration in Enhancement/Depletion (E/D) Mode Logic Circuits of 1000 or More Transistors
Contract Overview
Contract Amount: $15,903,488 ($15.9M)
Contractor: HRL Laboratories, LLC
Awarding Agency: Department of Defense
Start Date: 2009-09-04
End Date: 2016-06-30
Contract Duration: 2,491 days
Daily Burn Rate: $6.4K/day
Official Description: RESEARCH: THE OBJECTIVE OF THE NITRIDE ELECTRONIC NEXT-GENERATION TECHNOLOGY (NEXT) PROGRAM IS TO DEVELOP A REVOLUTIONARY NITRIDE TRANSISTOR TECHNOLOGY THAT SIMULTANEOUSLY PROVIDES EXTREMELY HIGH-SPEED AND HIGH-VOLTAGE SWING (JFOM > 5 THZ-V) IN A PROCESS CONSISTENT WITH LARGE SCALE INTEGRATION IN ENHANCEMENT/DEPLETION (E/D) MODE LOGIC CIRCUITS OF 1000 OR MORE TRANSISTORS.
Place of Performance
Location: California, 90265