DoD's $14.6M STT-RAM R&D contract with Grandis, Inc. aimed to revolutionize memory technology

Contract Overview

Contract Amount: $14,659,570 ($14.7M)

Contractor: Grandis, Inc

Awarding Agency: Department of Defense

Start Date: 2008-10-17

End Date: 2012-10-20

Contract Duration: 1,464 days

Daily Burn Rate: $10.0K/day

Competition Type: FULL AND OPEN COMPETITION

Number of Offers Received: 9

Pricing Type: COST SHARING

Sector: R&D

Official Description: SPIN TORQUE TRANSFER-RANDOM ACCESS MEMORY (STT-RAM) - PHASE 1. THE GOAL OF THIS PROGRAM IS TO DEVELOP MATERIALS AND PROCESSES TO FULLY EXPLOIT THE SPIN-TORQUE TRANSFER (STT) PHENOMENON FOR CREATING UNIVERSAL MEMORY ELEMENTS.

Place of Performance

Location: MILPITAS, SANTA CLARA County, CALIFORNIA, 95035

State: California Government Spending

Plain-Language Summary

Department of Defense obligated $14.7 million to GRANDIS, INC for work described as: SPIN TORQUE TRANSFER-RANDOM ACCESS MEMORY (STT-RAM) - PHASE 1. THE GOAL OF THIS PROGRAM IS TO DEVELOP MATERIALS AND PROCESSES TO FULLY EXPLOIT THE SPIN-TORQUE TRANSFER (STT) PHENOMENON FOR CREATING UNIVERSAL MEMORY ELEMENTS. Key points: 1. The contract focused on developing advanced materials and processes for spin-torque transfer random access memory (STT-RAM). 2. This research aimed to create a universal memory element, potentially impacting future computing architectures. 3. The project was funded by DARPA, known for high-risk, high-reward research initiatives. 4. The contract duration was over three years, indicating a substantial research and development effort. 5. The nature of R&D contracts often involves inherent risks and uncertainties in achieving specific technological breakthroughs. 6. The award was made under full and open competition, suggesting a broad search for qualified contractors.

Value Assessment

Rating: fair

Assessing the value for money on this R&D contract is challenging without knowing the specific technological outcomes achieved. The $14.6 million investment was directed towards a high-potential area of memory technology. Benchmarking against similar foundational research projects in advanced memory is difficult due to the specialized nature of STT-RAM. The cost-sharing aspect (PT: COST SHARING) suggests Grandis, Inc. also invested its own resources, which can be a positive indicator of commitment and shared risk.

Cost Per Unit: N/A

Competition Analysis

Competition Level: full-and-open

This contract was awarded under full and open competition, indicating that the solicitation was broadly advertised and multiple interested parties could submit proposals. The presence of 9 bidders (NO: 9) suggests a healthy level of interest and competition for this advanced research opportunity. A competitive bidding process is generally expected to lead to more favorable pricing and innovative solutions.

Taxpayer Impact: A competitive process for R&D contracts like this helps ensure taxpayer funds are used efficiently by encouraging multiple firms to offer their best technical approaches and pricing.

Public Impact

The primary beneficiaries are the Department of Defense and the broader technology sector, through advancements in memory technology. The services delivered were fundamental research and development in materials science and semiconductor physics. The geographic impact is primarily within the United States, specifically California where Grandis, Inc. is located. Workforce implications include highly skilled researchers, engineers, and technicians in the field of advanced materials and memory technology.

Waste & Efficiency Indicators

Waste Risk Score: 50 / 10

Warning Flags

Uncertainty of R&D outcomes: Early-stage research may not yield commercially viable or deployable technology.
Long development cycles: Breakthroughs in fundamental science can take many years to translate into practical applications.
Potential for technology obsolescence: Rapid advancements in the semiconductor industry could outpace the developed technology.

Positive Signals

Focus on a critical technology area: STT-RAM has the potential for significant improvements in speed, density, and power efficiency.
Involvement of DARPA: Indicates a strategic focus on cutting-edge defense-related research.
Cost-sharing by contractor: Suggests strong belief in the project's potential by Grandis, Inc.

Sector Analysis

The contract falls within the Research and Development sector, specifically focusing on physical sciences and engineering. The semiconductor memory market is a multi-billion dollar global industry. This contract aimed to push the boundaries of non-volatile memory technology, potentially creating a new category or significantly improving existing ones like DRAM and NAND flash. Comparable spending benchmarks for foundational R&D in advanced materials can vary widely, but significant government investment is typical for projects with strategic national security implications.

Small Business Impact

This contract was awarded to Grandis, Inc. and does not appear to have specific small business set-aside provisions (SS: false, SB: false). The nature of advanced R&D in specialized fields like STT-RAM often involves established companies or research institutions with significant prior expertise and infrastructure. There is no direct information provided on subcontracting plans to small businesses, but the focus on fundamental research may limit opportunities for broad subcontracting.

Oversight & Accountability

Oversight for this contract would have been managed by the Department of Defense, likely through DARPA program managers. Accountability measures would involve regular progress reports, milestone reviews, and adherence to the research plan and budget. Transparency in R&D contracts can be limited due to the proprietary nature of the research and national security considerations. Inspector General jurisdiction would apply to any allegations of fraud, waste, or abuse.

Related Government Programs

DARPA Advanced Memory Research Programs
Department of Defense Semiconductor Research Initiatives
National Science Foundation (NSF) Materials Research Programs
Department of Energy (DOE) Advanced Computing Research

Risk Flags

R&D Project Uncertainty
Technology Maturation Risk
Long Development Timeline

Frequently Asked Questions

What is this federal contract paying for?

Department of Defense awarded $14.7 million to GRANDIS, INC. SPIN TORQUE TRANSFER-RANDOM ACCESS MEMORY (STT-RAM) - PHASE 1. THE GOAL OF THIS PROGRAM IS TO DEVELOP MATERIALS AND PROCESSES TO FULLY EXPLOIT THE SPIN-TORQUE TRANSFER (STT) PHENOMENON FOR CREATING UNIVERSAL MEMORY ELEMENTS.

Who is the contractor on this award?

The obligated recipient is GRANDIS, INC.

Which agency awarded this contract?

Awarding agency: Department of Defense (Defense Advanced Research Projects Agency).

What is the total obligated amount?

The obligated amount is $14.7 million.

What is the period of performance?

Start: 2008-10-17. End: 2012-10-20.

What was the specific technological advantage STT-RAM offered over existing memory technologies at the time of the contract?

At the time of the contract (2008-2012), STT-RAM was envisioned to offer significant advantages over existing memory technologies like DRAM and NAND flash. Key potential benefits included non-volatility (retaining data without power), higher speeds approaching DRAM, greater endurance than NAND flash, and lower power consumption. The 'spin-torque transfer' mechanism promised a more efficient way to switch the magnetic state of memory cells compared to earlier MRAM technologies. DARPA's investment aimed to mature the materials and processes required to realize these theoretical advantages, potentially leading to a universal memory solution that could replace multiple existing types.

What was Grandis, Inc.'s track record in advanced memory research prior to this contract?

Grandis, Inc. was a company specializing in magnetic random-access memory (MRAM) technology, particularly focusing on STT-MRAM. Prior to this DoD contract, Grandis had already established itself as a leader in developing STT-MRAM, securing venture capital funding and demonstrating working prototypes. Their expertise lay in the materials science and fabrication processes necessary for STT-MRAM. The company was known for its innovative approach to magnetic tunnel junctions (MTJs) and the spin-transfer torque switching mechanism, making them a logical choice for DARPA's ambitious research goals in this area.

How did the $14.6 million funding compare to other R&D investments in memory technology during that period?

The $14.6 million awarded to Grandis, Inc. by DARPA for STT-RAM Phase 1 represents a significant, but not exceptionally large, investment for foundational R&D in a cutting-edge technology area during the late 2000s. Major semiconductor companies were investing billions in scaling existing technologies like DRAM and NAND flash, as well as exploring next-generation options. However, for a specific, high-risk R&D project focused on a novel memory concept like STT-RAM, $14.6 million was a substantial sum, indicative of DARPA's commitment to exploring potentially disruptive technologies. It allowed for dedicated research into materials and processes over several years.

What were the key risks associated with developing STT-RAM technology under this contract?

The primary risks associated with developing STT-RAM technology under this contract were inherent to early-stage R&D. These included: 1) Materials Science Challenges: Discovering and optimizing materials that exhibit the desired magnetic properties and allow for efficient spin-torque transfer switching at room temperature and with low energy. 2) Process Integration: Developing reliable and scalable manufacturing processes to fabricate STT-RAM devices with high yield and uniformity, integrating them with standard semiconductor fabrication lines. 3) Performance Hurdles: Achieving the targeted metrics for speed, power consumption, endurance, and data retention that would make STT-RAM competitive with or superior to existing memory types. 4) Fundamental Physics Limitations: Encountering unforeseen physical phenomena that could limit performance or scalability. 5) Commercial Viability: Ensuring the developed technology could eventually be manufactured cost-effectively at scale.

What was the expected impact of STT-RAM on future defense systems?

The expected impact of STT-RAM on future defense systems was significant, driven by its potential for high-speed, non-volatile, and low-power memory. For defense applications, this translates to improved performance and reduced power requirements for embedded systems in aircraft, vehicles, and communication devices. Non-volatility means critical data and operating systems would be retained even if power is lost, enhancing system resilience and reducing boot-up times. Faster memory speeds could improve the performance of sensor processing, data analysis, and command and control systems. Furthermore, reduced power consumption is crucial for extending the operational range and endurance of battery-powered or power-constrained platforms.

Industry Classification

NAICS: Professional, Scientific, and Technical Services › Scientific Research and Development Services › Research and Development in the Physical, Engineering, and Life Sciences (except Biotechnology)

Product/Service Code: RESEARCH AND DEVELOPMENT › DEFENSE (OTHER) R&D

Competition & Pricing

Extent Competed: FULL AND OPEN COMPETITION

Solicitation Procedures: BASIC RESEARCH

Offers Received: 9

Pricing Type: COST SHARING (T)

Evaluated Preference: NONE

Contractor Details

Address: 1123 CADILLAC CT, MILPITAS, CA, 17

Business Categories: Category Business, Corporate Entity Not Tax Exempt, Federally Funded Research and Development Corp, Small Business, Special Designations, U.S.-Owned Business

Financial Breakdown

Contract Ceiling: $14,659,700

Exercised Options: $14,659,700

Current Obligation: $14,659,570

Contract Characteristics

Cost or Pricing Data: YES

Timeline