DoD's $20.7M investment in silicon carbide power electronics research shows potential for advanced defense capabilities

Contract Overview

Contract Amount: $20,694,037 ($20.7M)

Contractor: United Silicon Carbide, Inc.

Awarding Agency: Department of Defense

Start Date: 2013-08-14

End Date: 2019-03-15

Contract Duration: 2,039 days

Daily Burn Rate: $10.1K/day

Competition Type: FULL AND OPEN COMPETITION AFTER EXCLUSION OF SOURCES

Number of Offers Received: 1

Pricing Type: COST PLUS FIXED FEE

Sector: R&D

Official Description: IGF::OT::IGF SILICON CARBIDE VERTICAL JFET POWER ELECTRONICS FOR MEA

Place of Performance

Location: MONMOUTH JUNCTION, MIDDLESEX County, NEW JERSEY, 08852

State: New Jersey Government Spending

Plain-Language Summary

Department of Defense obligated $20.7 million to UNITED SILICON CARBIDE, INC. for work described as: IGF::OT::IGF SILICON CARBIDE VERTICAL JFET POWER ELECTRONICS FOR MEA Key points: 1. The contract focused on R&D for advanced power electronics, a critical area for defense modernization. 2. Competition was initially excluded, raising questions about initial source selection, but later opened. 3. The contract duration of nearly 7 years suggests a complex, long-term research objective. 4. Performance was managed by the Defense Contract Management Agency, indicating a focus on defense applications. 5. The research aligns with broader trends in advanced materials for high-performance defense systems. 6. The total award value is moderate for a multi-year R&D effort in a specialized field.

Value Assessment

Rating: fair

Benchmarking the value of this R&D contract is challenging due to its specialized nature and the lack of direct public comparisons for similar silicon carbide JFET research. The Cost Plus Fixed Fee (CPFF) structure allows for cost flexibility but requires careful oversight to ensure efficiency. Without detailed cost breakdowns or performance metrics, a definitive value-for-money assessment is difficult, but the award amount appears reasonable for a multi-year research initiative in a cutting-edge technological area.

Cost Per Unit: N/A

Competition Analysis

Competition Level: limited

The contract was initially awarded under 'Full and Open Competition After Exclusion of Sources,' suggesting a specific reason for excluding certain sources at the outset, possibly related to proprietary technology or unique capabilities. While it later opened to broader competition, the initial exclusion might have limited the pool of potential bidders. The specifics of the exclusion and subsequent opening are not detailed, making it hard to fully assess the impact on price discovery.

Taxpayer Impact: The initial exclusion of sources could mean taxpayers did not benefit from the broadest possible competition, potentially leading to a higher price than if all qualified vendors had been considered from the start.

Public Impact

The primary beneficiaries are the Department of Defense, which gains access to advanced power electronics technology. The research aims to deliver improved power efficiency and performance for military electronic systems. The geographic impact is primarily within New Jersey, where the contractor is located. Workforce implications include specialized R&D roles for scientists and engineers in the semiconductor field.

Waste & Efficiency Indicators

Waste Risk Score: 50 / 10

Warning Flags

Initial exclusion of sources raises concerns about the breadth of competition and potential impact on cost.
The CPFF contract type can lead to cost overruns if not managed rigorously.
Lack of detailed public performance metrics makes it difficult to assess the full value and effectiveness of the R&D investment.

Positive Signals

Focus on a critical technology (silicon carbide) for future defense capabilities.
Contract awarded to a specialized company, United Silicon Carbide, Inc., suggesting expertise in the field.
Long-term research effort indicates commitment to developing advanced solutions.

Sector Analysis

This contract falls within the Research and Development sector, specifically focusing on advanced materials and power electronics. The market for silicon carbide (SiC) power devices is growing rapidly, driven by demand for higher efficiency and performance in applications ranging from electric vehicles to renewable energy and, crucially, defense systems. The government's investment in SiC technology development is strategic, aiming to foster domestic capabilities and ensure access to next-generation components for critical infrastructure and military platforms. Comparable spending benchmarks are difficult to pinpoint due to the specialized R&D nature, but significant investments are being made across government and industry to advance SiC technology.

Small Business Impact

This contract does not appear to have involved small business set-asides, as indicated by `sb: false`. The focus on specialized R&D in advanced materials suggests that the primary contractor likely possesses unique capabilities. There is no explicit information regarding subcontracting plans with small businesses. The impact on the small business ecosystem is likely minimal for this specific contract, given its specialized nature and the size of the prime contractor.

Oversight & Accountability

Oversight for this contract was likely managed by the Defense Contract Management Agency (DCMA), which typically ensures compliance with contract terms and quality standards for defense procurements. The Cost Plus Fixed Fee (CPFF) structure necessitates robust financial oversight to monitor costs and prevent overruns. Transparency is limited by the nature of R&D contracts, which often contain proprietary information. Inspector General jurisdiction would apply in cases of fraud, waste, or abuse.

Related Government Programs

Advanced Materials Research
Power Electronics Development
Semiconductor Technology
Defense Research and Development
Strategic Technology Investments

Risk Flags

Initial exclusion of sources
Cost Plus Fixed Fee contract type
Long contract duration

Frequently Asked Questions

What is this federal contract paying for?

Department of Defense awarded $20.7 million to UNITED SILICON CARBIDE, INC.. IGF::OT::IGF SILICON CARBIDE VERTICAL JFET POWER ELECTRONICS FOR MEA

Who is the contractor on this award?

The obligated recipient is UNITED SILICON CARBIDE, INC..

Which agency awarded this contract?

Awarding agency: Department of Defense (Defense Contract Management Agency).

What is the total obligated amount?

The obligated amount is $20.7 million.

What is the period of performance?

Start: 2013-08-14. End: 2019-03-15.

What is the specific technological advancement United Silicon Carbide, Inc. was expected to deliver under this contract?

The contract, "IGF::OT::IGF SILICON CARBIDE VERTICAL JFET POWER ELECTRONICS FOR MEA," indicates a focus on developing Silicon Carbide (SiC) Vertical Junction Field-Effect Transistors (JFETs) for "MEA" (likely Military Electronic Applications). The goal was to advance power electronics capabilities, potentially leading to more efficient, smaller, and higher-temperature-resistant power conversion and control systems for military platforms. This could include applications in radar systems, power supplies, and other critical electronic warfare or command and control systems where performance and reliability under harsh conditions are paramount. The research likely involved material characterization, device fabrication, and performance testing to push the boundaries of SiC JFET technology for defense needs.

How does the $20.7 million award compare to typical R&D spending in advanced semiconductor materials?

The $20.7 million award for this multi-year R&D effort in silicon carbide power electronics is within a reasonable range for specialized government-funded research. Investments in advanced materials and semiconductor technology can vary widely, but multi-year projects focusing on next-generation components often fall into the tens of millions of dollars. For instance, DARPA and other defense research agencies frequently fund programs in this magnitude for critical technology development. While not a massive sum compared to large-scale production contracts, it represents a significant commitment to advancing a strategic technology area that has long-term defense implications.

What are the primary risks associated with this type of R&D contract?

The primary risks associated with this R&D contract include technical risk (the research may not yield the desired technological breakthroughs), schedule risk (development may take longer than anticipated), and cost risk (especially with a Cost Plus Fixed Fee structure, where costs can escalate if not managed tightly). There's also the risk of obsolescence if the technology developed is surpassed by competing advancements before it can be fielded. Furthermore, the initial exclusion of sources, even if later rectified, introduces a risk related to suboptimal initial planning or vendor selection. Ensuring the developed technology meets stringent military requirements adds another layer of complexity and risk.

What is the track record of United Silicon Carbide, Inc. in government contracting prior to this award?

Information regarding United Silicon Carbide, Inc.'s specific track record with government contracts prior to this award is not detailed in the provided data. However, the fact that they were awarded this significant R&D contract by the Department of Defense suggests they possessed the necessary technical expertise and capabilities in silicon carbide power electronics. Companies specializing in niche, high-technology fields often secure such contracts based on their innovative research, patented technologies, or previous successes in the private sector or academic collaborations. A deeper dive into federal procurement databases would be needed to ascertain their full history of government awards and performance.

How does this contract contribute to the broader strategic goals of the Department of Defense regarding technological superiority?

This contract directly supports the Department of Defense's strategic goal of maintaining technological superiority by investing in foundational, next-generation power electronics. Silicon carbide offers significant advantages over traditional silicon, including higher efficiency, better thermal performance, and increased power density. These improvements are critical for developing more capable and resilient military systems, such as advanced radar, electronic warfare systems, directed energy weapons, and more efficient power management for aircraft and ground vehicles. By funding research in this area, the DoD aims to secure a technological edge, reduce the size and weight of critical components, and enhance the overall performance and survivability of its platforms.

What were the key performance indicators (KPIs) or milestones expected under this contract?

The provided data does not specify the key performance indicators (KPIs) or milestones for this R&D contract. Typically, for such research efforts, milestones would be tied to achieving specific technological advancements, such as demonstrating a certain level of power efficiency, operating temperature range, device reliability, or fabricating functional prototypes meeting defined specifications. Progress reports detailing research findings, material characterization results, and device performance data would likely be required at regular intervals. The successful completion of the contract would hinge on meeting these R&D objectives and demonstrating the viability of SiC JFETs for military applications.

Industry Classification

NAICS: Professional, Scientific, and Technical Services › Scientific Research and Development Services › Research and Development in the Physical, Engineering, and Life Sciences (except Biotechnology)

Product/Service Code: RESEARCH AND DEVELOPMENT › C – National Defense R&D Services

Competition & Pricing

Extent Competed: FULL AND OPEN COMPETITION AFTER EXCLUSION OF SOURCES

Solicitation Procedures: NEGOTIATED PROPOSAL/QUOTE

Offers Received: 1

Pricing Type: COST PLUS FIXED FEE (U)

Evaluated Preference: NONE

Contractor Details

Address: 650 COLLEGE RD E, PRINCETON, NJ, 08540

Business Categories: Category Business, Corporate Entity Not Tax Exempt, Small Business, Special Designations, U.S.-Owned Business

Financial Breakdown

Contract Ceiling: $20,694,037

Exercised Options: $20,694,037

Current Obligation: $20,694,037

Contract Characteristics

Commercial Item: COMMERCIAL PRODUCTS/SERVICES PROCEDURES NOT USED

Cost or Pricing Data: YES

Timeline